yyy Multicrystalline Silicon Wafers
     
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Multicrystalline Silicon Wafers
 

  Specifications                            Multicrystalline Silicon Wafers
 

156mm *156mm*200/±30μm

 

  Crystal & Material Properties

Property
Specifications
Crystallinity
Multicrystalline
Conductivity Type/ Dopant
P/ Boron
Oxygen Concentration
≤1×1018atoms/ cm3
Carbon Concentration
≤5×1016atoms/ cm3
   
  Electrical Properties
Property
Specifications
Resistivity
0.5-3Ω·cm
Minority Carrier Life Time
≥2.0μs
   
  Geometric Properties
Property
Specifications
Geometry
Square
Tolerance of the Dimensions (Width/ Length)
156mm±0.5mm
Thickness
200±30μm
Angle between Sides
90°±0.3°
Chamfer
Chamfer angle:45°±10° ;Chamfer dimension: 1.5±0.5 mm
TTV
≤50μm
Saw mark Depth
≤15μm
Chips
Chips visible as silhouette by illumination from the back are not allowed
Edge chips,corner chips
Length≤1.5mm;Depth≤1mm;Max.2 places, No V shape
   
  Surface Properties
Property
Specifications
Surface As-cut and cleaned, visible contaminations
Cracks & Pinholes Not allowed
   
   

     
   
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